- ion-implantation layer
- іонно-імплантований шар
English-Ukrainian dictionary of microelectronics. 2013.
ion-implantation layer
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Ion implantation — is a materials engineering process by which ions of a material can be implanted into another solid, thereby changing the physical properties of the solid. Ion implantation is used in semiconductor device fabrication and in metal finishing, as… … Wikipedia
Ion Beam Mixing — is a process for adhering two multilayers, especially a substrate and deposited surface layer. The process involves bombarding layered samples with doses of ion radiation in order to promote mixing at the interface, and generally serves as a… … Wikipedia
Ion beam — An ion beam is a type of particle beam consisting of ions. Ion beams have many uses in electronics manufacturing (principally ion implantation) and other industries. Today s ion beam sources are typically derived from the mercury vapor thrusters… … Wikipedia
Focused ion beam — Focused ion beam, also known as FIB, is a technique used particularly in the semiconductor and materials science fields for site specific analysis, deposition, and ablation of materials. The FIB is a scientific instrument that resembles a… … Wikipedia
Deep reactive-ion etching — (DRIE) is a highly anisotropic etch process used to create deep penetration, steep sided holes and trenches in wafers, with aspect ratios of 20:1 or more. It was developed for microelectromechanical systems (MEMS), which require these features,… … Wikipedia
Static secondary ion mass spectrometry — Static secondary ion mass spectrometry, or static SIMS is a technique for chemical analysis including elemental composition and chemical structure of the uppermost atomic or molecular layer of a solid which may be a metal, semiconductor or… … Wikipedia
radiation — radiational, adj. /ray dee ay sheuhn/, n. 1. Physics. a. the process in which energy is emitted as particles or waves. b. the complete process in which energy is emitted by one body, transmitted through an intervening medium or space, and… … Universalium
Silicon on insulator — technology (SOI) refers to the use of a layered silicon insulator silicon substrate in place of conventional silicon substrates in semiconductor manufacturing, especially microelectronics, to reduce parasitic device capacitance and thereby… … Wikipedia
Self-aligned gate — A self aligned gate is a design arrangement where a highly doped gate in a MOSFET is used as a mask for the doping of the source and drain around it. This technique ensures that the gate will always overlap the edges of the source and drain. The… … Wikipedia
Plasma (physics) — For other uses, see Plasma. Plasma lamp, illustrating some of the more complex phenomena of a plasma, including filamentation. The colors are a result of relaxation of electrons in excited states to lower energy states after they have recombined… … Wikipedia
Semiconductor device fabrication — Semiconductor manufacturing processes 10 µm 1971 3 µm 1975 1.5 µm 1982 … Wikipedia
